Journal Article

FZJ-2016-05745

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Growth, characterization, and transport properties of ternary (Bi $_{1− x}$ Sb $_{x}$ )$_{2}$ Te $_{3}$ topological insulator layers

Weyrich, C.FZJ* ; Drögeler, M. ; Kampmeier, J.FZJ* ; Eschbach, M.FZJ* ; Mussler, G.FZJ* ; Merzenich, T.FZJ* ; Stoica, T.FZJ* ; Batov, I. E. ; Schubert, J.FZJ* ; Plucinski, L.FZJ* ; Beschoten, B.RWTH* ; Schneider, C. M.FZJ* ; Stampfer, C.RWTH* ; Grützmacher, D.FZJ* ; Schäpers, T. (Corresponding author)FZJ*

2016
IOP Publ. Bristol

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Please use a persistent id in citations: doi:10.1088/0953-8984/28/49/495501

Abstract: Ternary (Bi1−xSbx)2Te3 films with an Sb content between 0 and 100% were deposited ona Si(1 1 1) substrate by means of molecular beam epitaxy. X-ray diffraction measurementsconfirm single crystal growth in all cases. The Sb content is determined by x-ray photoelectronspectroscopy. Consistent values of the Sb content are obtained from Raman spectroscopy.Scanning Raman spectroscopy reveals that the (Bi1−xSbx)2Te3 layers with an intermediateSb content show spatial composition inhomogeneities. The observed spectra broadening inangular-resolved photoemission spectroscopy (ARPES) is also attributed to this phenomena.Upon increasing the Sb content from x = 0 to 1 the ARPES measurements show a shift ofthe Fermi level from the conduction band to the valence band. This shift is also confirmed bycorresponding magnetotransport measurements where the conductance changes from n- top-type. In this transition region, an increase of the resistivity is found, indicating a locationof the Fermi level within the band gap region. More detailed measurements in the transitionregion reveals that the transport takes place in two independent channels. By means of a gateelectrode the transport can be changed from n- to p-type, thus allowing a tuning of the Fermilevel within the topologically protected surface states.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)
3. Elektronische Eigenschaften (PGI-6)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; NCBI Molecular Biology Database ; National-Konsortium ; Nationallizenz ; No Authors Fulltext ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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