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000820548 1001_ $$0P:(DE-Juel1)125588$$aGrutzmacher, D.$$b0$$ufzj
000820548 1112_ $$aESSDERC 2016 - 46th European Solid-State Device Research Conference$$cLausanne$$d9/12/2016 - 9/15/2016$$wSwitzerland
000820548 245__ $$aLow-energy consumption nano-opto-electronics based on III-nitride-LED mesoscopic structures
000820548 260__ $$bIEEE$$c2016
000820548 29510 $$a(ESSDERC) : [Proceedings] - IEEE, 2016. - ISBN 978-1-5090-2969-3 - doi:10.1109/ESSDERC.2016.7599652
000820548 300__ $$a327-329
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000820548 520__ $$aNano-LEDs based on mesoscopic structures are the key elements for future low energy consumption optoelectronics as well as for secure, fast and efficient optical communication. We show first results using a novel device concept in which nano-LED emitters based on InGaN mesoscopic structures deposited by metalorganic vapor phase epitaxy (MOVPE) were implemented. The nano-LEDs were integrated in a high frequency device layout without degradation of their optical and electrical properties. The results presented demonstrate the great promise of the novel device concept and integration technology for low energy consumption nano-opto-electronics operated in the telecommunication wavelength range.
000820548 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
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000820548 7001_ $$0P:(DE-Juel1)128613$$aMikulics, Martin$$b1$$eCorresponding author$$ufzj
000820548 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, Hilde$$b2$$ufzj
000820548 773__ $$a10.1109/ESSDERC.2016.7599652
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000820548 9141_ $$y2016
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