Contribution to a conference proceedings/Contribution to a book

FZJ-2016-05828

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Low-energy consumption nano-opto-electronics based on III-nitride-LED mesoscopic structures

Grutzmacher, D.FZJ* ; Mikulics, M. (Corresponding author)FZJ* ; Hardtdegen, H.FZJ*

2016
IEEE

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Please use a persistent id in citations: doi:10.1109/ESSDERC.2016.7599652

Abstract: Nano-LEDs based on mesoscopic structures are the key elements for future low energy consumption optoelectronics as well as for secure, fast and efficient optical communication. We show first results using a novel device concept in which nano-LED emitters based on InGaN mesoscopic structures deposited by metalorganic vapor phase epitaxy (MOVPE) were implemented. The nano-LEDs were integrated in a high frequency device layout without degradation of their optical and electrical properties. The results presented demonstrate the great promise of the novel device concept and integration technology for low energy consumption nano-opto-electronics operated in the telecommunication wavelength range.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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Database coverage:
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