TY  - CONF
AU  - Grutzmacher, D.
AU  - Mikulics, Martin
AU  - Hardtdegen, Hilde
TI  - Low-energy consumption nano-opto-electronics based on III-nitride-LED mesoscopic structures
PB  - IEEE
M1  - FZJ-2016-05828
SP  - 327-329
PY  - 2016
AB  - Nano-LEDs based on mesoscopic structures are the key elements for future low energy consumption optoelectronics as well as for secure, fast and efficient optical communication. We show first results using a novel device concept in which nano-LED emitters based on InGaN mesoscopic structures deposited by metalorganic vapor phase epitaxy (MOVPE) were implemented. The nano-LEDs were integrated in a high frequency device layout without degradation of their optical and electrical properties. The results presented demonstrate the great promise of the novel device concept and integration technology for low energy consumption nano-opto-electronics operated in the telecommunication wavelength range.
T2  - ESSDERC 2016 - 46th European Solid-State Device Research Conference
CY  - 12 Sep 2016 - 15 Sep 2016, Lausanne (Switzerland)
Y2  - 12 Sep 2016 - 15 Sep 2016
M2  - Lausanne, Switzerland
LB  - PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
DO  - DOI:10.1109/ESSDERC.2016.7599652
UR  - https://juser.fz-juelich.de/record/820548
ER  -