Home > Publications database > Low-energy consumption nano-opto-electronics based on III-nitride-LED mesoscopic structures > print |
001 | 820548 | ||
005 | 20210129224517.0 | ||
024 | 7 | _ | |a 10.1109/ESSDERC.2016.7599652 |2 doi |
037 | _ | _ | |a FZJ-2016-05828 |
100 | 1 | _ | |a Grutzmacher, D. |0 P:(DE-Juel1)125588 |b 0 |u fzj |
111 | 2 | _ | |a ESSDERC 2016 - 46th European Solid-State Device Research Conference |c Lausanne |d 9/12/2016 - 9/15/2016 |w Switzerland |
245 | _ | _ | |a Low-energy consumption nano-opto-electronics based on III-nitride-LED mesoscopic structures |
260 | _ | _ | |c 2016 |b IEEE |
295 | 1 | 0 | |a (ESSDERC) : [Proceedings] - IEEE, 2016. - ISBN 978-1-5090-2969-3 - doi:10.1109/ESSDERC.2016.7599652 |
300 | _ | _ | |a 327-329 |
336 | 7 | _ | |a CONFERENCE_PAPER |2 ORCID |
336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
336 | 7 | _ | |a conferenceObject |2 DRIVER |
336 | 7 | _ | |a Output Types/Conference Paper |2 DataCite |
336 | 7 | _ | |a Contribution to a conference proceedings |b contrib |m contrib |0 PUB:(DE-HGF)8 |s 1478761613_18734 |2 PUB:(DE-HGF) |
336 | 7 | _ | |a Contribution to a book |0 PUB:(DE-HGF)7 |2 PUB:(DE-HGF) |m contb |
520 | _ | _ | |a Nano-LEDs based on mesoscopic structures are the key elements for future low energy consumption optoelectronics as well as for secure, fast and efficient optical communication. We show first results using a novel device concept in which nano-LED emitters based on InGaN mesoscopic structures deposited by metalorganic vapor phase epitaxy (MOVPE) were implemented. The nano-LEDs were integrated in a high frequency device layout without degradation of their optical and electrical properties. The results presented demonstrate the great promise of the novel device concept and integration technology for low energy consumption nano-opto-electronics operated in the telecommunication wavelength range. |
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588 | _ | _ | |a Dataset connected to CrossRef Conference |
700 | 1 | _ | |a Mikulics, Martin |0 P:(DE-Juel1)128613 |b 1 |e Corresponding author |u fzj |
700 | 1 | _ | |a Hardtdegen, Hilde |0 P:(DE-Juel1)125593 |b 2 |u fzj |
773 | _ | _ | |a 10.1109/ESSDERC.2016.7599652 |
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910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 2 |6 P:(DE-Juel1)125593 |
913 | 1 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
914 | 1 | _ | |y 2016 |
915 | _ | _ | |a No Authors Fulltext |0 StatID:(DE-HGF)0550 |2 StatID |
920 | _ | _ | |l yes |
920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
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