TY  - JOUR
AU  - Strangio, Sebastiano
AU  - Palestri, Pierpaolo
AU  - Esseni, DAVID
AU  - Selmi, Luca
AU  - Crupi, Felice
AU  - Richter, Simon
AU  - Zhao, Qing-Tai
AU  - Mantl, Siegfried
TI  - Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells
JO  - IEEE journal of the Electron Devices Society
VL  - 3
IS  - 3
SN  - 2168-6734
CY  - [New York, NY]
PB  - IEEE
M1  - FZJ-2016-06379
SP  - 223 - 232
PY  - 2015
AB  - We use mixed device-circuit simulations to predict the performance of 6T static RAM (SRAM) cells implemented with tunnel-FETs (TFETs). Idealized template devices are used to assess the impact of device unidirectionality, which is inherent to TFETs and identify the most promising configuration for the access transistors. The same template devices are used to investigate the VDD range, where TFETs may be advantageous compared to conventional CMOS. The impact of device ambipolarity on SRAM operation is also analyzed. Realistic device templates extracted from experimental data of fabricated state-of-the-art silicon pTFET are then used to estimate the performance gap between the simulation of idealized TFETs and the best experimental implementations.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000369884400020
DO  - DOI:10.1109/JEDS.2015.2392793
UR  - https://juser.fz-juelich.de/record/821136
ER  -