Journal Article

FZJ-2016-06379

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells

Strangio, S. (Corresponding author) ; Palestri, P. ; Esseni, D. ; Selmi, L. ; Crupi, F. ; Richter, S.FZJ* ; Zhao, Q.-T.FZJ* ; Mantl, S.FZJ*

2015
IEEE [New York, NY]

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Please use a persistent id in citations: http://hdl.handle.net/2128/13043  doi:10.1109/JEDS.2015.2392793

Abstract: We use mixed device-circuit simulations to predict the performance of 6T static RAM (SRAM) cells implemented with tunnel-FETs (TFETs). Idealized template devices are used to assess the impact of device unidirectionality, which is inherent to TFETs and identify the most promising configuration for the access transistors. The same template devices are used to investigate the VDD range, where TFETs may be advantageous compared to conventional CMOS. The impact of device ambipolarity on SRAM operation is also analyzed. Realistic device templates extracted from experimental data of fabricated state-of-the-art silicon pTFET are then used to estimate the performance gap between the simulation of idealized TFETs and the best experimental implementations.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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Database coverage:
; ; Current Contents - Engineering, Computing and Technology ; DOAJ Seal ; SCOPUS ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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