000821137 001__ 821137
000821137 005__ 20210129224810.0
000821137 0247_ $$2doi$$a10.1016/j.sse.2015.02.018
000821137 0247_ $$2ISSN$$a0038-1101
000821137 0247_ $$2ISSN$$a1879-2405
000821137 0247_ $$2WOS$$aWOS:000353004400017
000821137 037__ $$aFZJ-2016-06380
000821137 082__ $$a530
000821137 1001_ $$0P:(DE-HGF)0$$aRichter, S.$$b0$$eCorresponding author
000821137 245__ $$aImproved Tunnel-FET inverter performance with SiGe/Si heterostructure nanowire TFETs by reduction of ambipolarity
000821137 260__ $$aOxford [u.a.]$$bPergamon, Elsevier Science$$c2015
000821137 3367_ $$2DRIVER$$aarticle
000821137 3367_ $$2DataCite$$aOutput Types/Journal article
000821137 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1480422073_20531
000821137 3367_ $$2BibTeX$$aARTICLE
000821137 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000821137 3367_ $$00$$2EndNote$$aJournal Article
000821137 520__ $$aComplementary MOSFET and Tunnel-FET inverters based on tri-gated strained Si nanowire arrays are demonstrated. The voltage transfer characteristics as well as the inverter supply currents of both inverter types are analyzed and compared. A degradation of the inverter output voltage is observed due to the ambipolar transfer characteristics of the symmetric homostructure TFET devices. Emulated TFET inverters based on the measured transfer characteristics of SiGe/Si heterostructure nanowire array n-channel TFETs with reduced ambipolarity demonstrate improved inverter switching for supply voltages down to VDD = 0.2 V.
000821137 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000821137 588__ $$aDataset connected to CrossRef
000821137 65017 $$0V:(DE-MLZ)GC-2004-2016$$2V:(DE-HGF)$$aBasic research$$x0
000821137 7001_ $$0P:(DE-Juel1)128856$$aTrellenkamp, S.$$b1
000821137 7001_ $$0P:(DE-HGF)0$$aSchäfer, A.$$b2
000821137 7001_ $$0P:(DE-HGF)0$$aHartmann, J. M.$$b3
000821137 7001_ $$0P:(DE-HGF)0$$aBourdelle, K. K.$$b4
000821137 7001_ $$0P:(DE-Juel1)128649$$aZhao, Q. T.$$b5$$ufzj
000821137 7001_ $$0P:(DE-Juel1)128609$$aMantl, S.$$b6$$ufzj
000821137 773__ $$0PERI:(DE-600)2012825-3$$a10.1016/j.sse.2015.02.018$$gVol. 108, p. 97 - 103$$p97 - 103$$tSolid state electronics$$v108$$x0038-1101$$y2015
000821137 8564_ $$uhttps://juser.fz-juelich.de/record/821137/files/1-s2.0-S0038110115000635-main.pdf$$yRestricted
000821137 8564_ $$uhttps://juser.fz-juelich.de/record/821137/files/1-s2.0-S0038110115000635-main.gif?subformat=icon$$xicon$$yRestricted
000821137 8564_ $$uhttps://juser.fz-juelich.de/record/821137/files/1-s2.0-S0038110115000635-main.jpg?subformat=icon-1440$$xicon-1440$$yRestricted
000821137 8564_ $$uhttps://juser.fz-juelich.de/record/821137/files/1-s2.0-S0038110115000635-main.jpg?subformat=icon-180$$xicon-180$$yRestricted
000821137 8564_ $$uhttps://juser.fz-juelich.de/record/821137/files/1-s2.0-S0038110115000635-main.jpg?subformat=icon-640$$xicon-640$$yRestricted
000821137 8564_ $$uhttps://juser.fz-juelich.de/record/821137/files/1-s2.0-S0038110115000635-main.pdf?subformat=pdfa$$xpdfa$$yRestricted
000821137 909CO $$ooai:juser.fz-juelich.de:821137$$pVDB
000821137 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)5960$$aForschungszentrum Jülich$$b0$$kFZJ
000821137 9101_ $$0I:(DE-Juel1)PGI-8-PT-20110228$$6P:(DE-Juel1)128856$$aPGI-8-PT$$b1$$kPGI-8-PT
000821137 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)144017$$aForschungszentrum Jülich$$b2$$kFZJ
000821137 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128649$$aForschungszentrum Jülich$$b5$$kFZJ
000821137 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128609$$aForschungszentrum Jülich$$b6$$kFZJ
000821137 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000821137 9141_ $$y2016
000821137 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000821137 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology
000821137 915__ $$0StatID:(DE-HGF)0600$$2StatID$$aDBCoverage$$bEbsco Academic Search
000821137 915__ $$0StatID:(DE-HGF)0550$$2StatID$$aNo Authors Fulltext
000821137 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bSOLID STATE ELECTRON : 2015
000821137 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000821137 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000821137 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000821137 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000821137 915__ $$0StatID:(DE-HGF)0030$$2StatID$$aPeer Review$$bASC
000821137 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000821137 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000821137 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000821137 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000821137 920__ $$lyes
000821137 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000821137 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1
000821137 980__ $$ajournal
000821137 980__ $$aVDB
000821137 980__ $$aUNRESTRICTED
000821137 980__ $$aI:(DE-Juel1)PGI-9-20110106
000821137 980__ $$aI:(DE-82)080009_20140620