Journal Article

FZJ-2016-06380

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Improved Tunnel-FET inverter performance with SiGe/Si heterostructure nanowire TFETs by reduction of ambipolarity

Richter, S. (Corresponding author)FZJ* ; Trellenkamp, S.PGI-8-PT* ; Schäfer, A.FZJ* ; Hartmann, J. M. ; Bourdelle, K. K. ; Zhao, Q. T.FZJ* ; Mantl, S.FZJ*

2015
Pergamon, Elsevier Science Oxford [u.a.]

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Please use a persistent id in citations: doi:10.1016/j.sse.2015.02.018

Abstract: Complementary MOSFET and Tunnel-FET inverters based on tri-gated strained Si nanowire arrays are demonstrated. The voltage transfer characteristics as well as the inverter supply currents of both inverter types are analyzed and compared. A degradation of the inverter output voltage is observed due to the ambipolar transfer characteristics of the symmetric homostructure TFET devices. Emulated TFET inverters based on the measured transfer characteristics of SiGe/Si heterostructure nanowire array n-channel TFETs with reduced ambipolarity demonstrate improved inverter switching for supply voltages down to VDD = 0.2 V.

Keyword(s): Basic research (1st)

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF < 5 ; JCR ; Nationallizenz ; No Authors Fulltext ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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