% IMPORTANT: The following is UTF-8 encoded. This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.
@ARTICLE{Richter:821137,
author = {Richter, S. and Trellenkamp, S. and Schäfer, A. and
Hartmann, J. M. and Bourdelle, K. K. and Zhao, Q. T. and
Mantl, S.},
title = {{I}mproved {T}unnel-{FET} inverter performance with
{S}i{G}e/{S}i heterostructure nanowire {TFET}s by reduction
of ambipolarity},
journal = {Solid state electronics},
volume = {108},
issn = {0038-1101},
address = {Oxford [u.a.]},
publisher = {Pergamon, Elsevier Science},
reportid = {FZJ-2016-06380},
pages = {97 - 103},
year = {2015},
abstract = {Complementary MOSFET and Tunnel-FET inverters based on
tri-gated strained Si nanowire arrays are demonstrated. The
voltage transfer characteristics as well as the inverter
supply currents of both inverter types are analyzed and
compared. A degradation of the inverter output voltage is
observed due to the ambipolar transfer characteristics of
the symmetric homostructure TFET devices. Emulated TFET
inverters based on the measured transfer characteristics of
SiGe/Si heterostructure nanowire array n-channel TFETs with
reduced ambipolarity demonstrate improved inverter switching
for supply voltages down to VDD = 0.2 V.},
cin = {PGI-9 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000353004400017},
doi = {10.1016/j.sse.2015.02.018},
url = {https://juser.fz-juelich.de/record/821137},
}