%0 Journal Article
%A Zhang, Bo
%A Hou, Chunlei
%A Ping, Yunxia
%A Yu, Wenjie
%A Xue, Zhongying
%A Wei, Xing
%A Di, Zengfeng
%A Zhang, Miao
%A Wang, Xi
%A Zhao, Qing-Tai
%T Impact of an ultra-thin Ti interlayer on the formation of NiSiGe/SiGe
%J Microelectronic engineering
%V 137
%@ 0167-9317
%C [S.l.]
%I Elsevier
%M FZJ-2016-06381
%P 92 - 95
%D 2015
%X We investigate the effects of a Titanium (Ti) interlayer on the formation of nickel-germanosilicide on relaxed Si0.7Ge0.3 layers. The layer morphology and sheet resistance are investigated at different annealing temperature. The presence of Ti atoms increases the thermal stability of NiSiGe about 100 °C. We demonstrate that the Ti atoms retard the Ni germanosilicidation rate, stabilize the NiSiGe phase, and smooth the NiSiGe/SiGe interface.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000355047500018
%R 10.1016/j.mee.2014.12.016
%U https://juser.fz-juelich.de/record/821138