Journal Article

FZJ-2016-06381

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Impact of an ultra-thin Ti interlayer on the formation of NiSiGe/SiGe

Zhang, B. (Corresponding author) ; Hou, C. ; Ping, Y. ; Yu, W. ; Xue, Z. ; Wei, X. ; Di, Z. ; Zhang, M. ; Wang, X. ; Zhao, Q.-T.FZJ*

2015
Elsevier [S.l.]

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Please use a persistent id in citations: doi:10.1016/j.mee.2014.12.016

Abstract: We investigate the effects of a Titanium (Ti) interlayer on the formation of nickel-germanosilicide on relaxed Si0.7Ge0.3 layers. The layer morphology and sheet resistance are investigated at different annealing temperature. The presence of Ti atoms increases the thermal stability of NiSiGe about 100 °C. We demonstrate that the Ti atoms retard the Ni germanosilicidation rate, stabilize the NiSiGe phase, and smooth the NiSiGe/SiGe interface.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; Ebsco Academic Search ; IF < 5 ; JCR ; Nationallizenz ; No Authors Fulltext ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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