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000821138 1001_ $$0P:(DE-HGF)0$$aZhang, Bo$$b0$$eCorresponding author
000821138 245__ $$aImpact of an ultra-thin Ti interlayer on the formation of NiSiGe/SiGe
000821138 260__ $$a[S.l.]$$bElsevier$$c2015
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000821138 520__ $$aWe investigate the effects of a Titanium (Ti) interlayer on the formation of nickel-germanosilicide on relaxed Si0.7Ge0.3 layers. The layer morphology and sheet resistance are investigated at different annealing temperature. The presence of Ti atoms increases the thermal stability of NiSiGe about 100 °C. We demonstrate that the Ti atoms retard the Ni germanosilicidation rate, stabilize the NiSiGe phase, and smooth the NiSiGe/SiGe interface.
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000821138 7001_ $$0P:(DE-HGF)0$$aHou, Chunlei$$b1
000821138 7001_ $$0P:(DE-HGF)0$$aPing, Yunxia$$b2
000821138 7001_ $$0P:(DE-HGF)0$$aYu, Wenjie$$b3
000821138 7001_ $$0P:(DE-HGF)0$$aXue, Zhongying$$b4
000821138 7001_ $$0P:(DE-HGF)0$$aWei, Xing$$b5
000821138 7001_ $$0P:(DE-HGF)0$$aDi, Zengfeng$$b6
000821138 7001_ $$0P:(DE-HGF)0$$aZhang, Miao$$b7
000821138 7001_ $$0P:(DE-HGF)0$$aWang, Xi$$b8
000821138 7001_ $$0P:(DE-Juel1)128649$$aZhao, Qing-Tai$$b9
000821138 773__ $$0PERI:(DE-600)1497065-x$$a10.1016/j.mee.2014.12.016$$gVol. 137, p. 92 - 95$$p92 - 95$$tMicroelectronic engineering$$v137$$x0167-9317$$y2015
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