TY  - JOUR
AU  - Zhang, Bo
AU  - Hou, Chunlei
AU  - Ping, Yunxia
AU  - Yu, Wenjie
AU  - Xue, Zhongying
AU  - Wei, Xing
AU  - Di, Zengfeng
AU  - Zhang, Miao
AU  - Wang, Xi
AU  - Zhao, Qing-Tai
TI  - Impact of an ultra-thin Ti interlayer on the formation of NiSiGe/SiGe
JO  - Microelectronic engineering
VL  - 137
SN  - 0167-9317
CY  - [S.l.]
PB  - Elsevier
M1  - FZJ-2016-06381
SP  - 92 - 95
PY  - 2015
AB  - We investigate the effects of a Titanium (Ti) interlayer on the formation of nickel-germanosilicide on relaxed Si0.7Ge0.3 layers. The layer morphology and sheet resistance are investigated at different annealing temperature. The presence of Ti atoms increases the thermal stability of NiSiGe about 100 °C. We demonstrate that the Ti atoms retard the Ni germanosilicidation rate, stabilize the NiSiGe phase, and smooth the NiSiGe/SiGe interface.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000355047500018
DO  - DOI:10.1016/j.mee.2014.12.016
UR  - https://juser.fz-juelich.de/record/821138
ER  -