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@ARTICLE{Zhang:821138,
      author       = {Zhang, Bo and Hou, Chunlei and Ping, Yunxia and Yu, Wenjie
                      and Xue, Zhongying and Wei, Xing and Di, Zengfeng and Zhang,
                      Miao and Wang, Xi and Zhao, Qing-Tai},
      title        = {{I}mpact of an ultra-thin {T}i interlayer on the formation
                      of {N}i{S}i{G}e/{S}i{G}e},
      journal      = {Microelectronic engineering},
      volume       = {137},
      issn         = {0167-9317},
      address      = {[S.l.]},
      publisher    = {Elsevier},
      reportid     = {FZJ-2016-06381},
      pages        = {92 - 95},
      year         = {2015},
      abstract     = {We investigate the effects of a Titanium (Ti) interlayer on
                      the formation of nickel-germanosilicide on relaxed
                      Si0.7Ge0.3 layers. The layer morphology and sheet resistance
                      are investigated at different annealing temperature. The
                      presence of Ti atoms increases the thermal stability of
                      NiSiGe about 100 °C. We demonstrate that the Ti atoms
                      retard the Ni germanosilicidation rate, stabilize the NiSiGe
                      phase, and smooth the NiSiGe/SiGe interface.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000355047500018},
      doi          = {10.1016/j.mee.2014.12.016},
      url          = {https://juser.fz-juelich.de/record/821138},
}