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| 001 | 821138 | ||
| 005 | 20210129224811.0 | ||
| 024 | 7 | _ | |a 10.1016/j.mee.2014.12.016 |2 doi |
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| 100 | 1 | _ | |a Zhang, Bo |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Impact of an ultra-thin Ti interlayer on the formation of NiSiGe/SiGe |
| 260 | _ | _ | |a [S.l.] |c 2015 |b Elsevier |
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| 520 | _ | _ | |a We investigate the effects of a Titanium (Ti) interlayer on the formation of nickel-germanosilicide on relaxed Si0.7Ge0.3 layers. The layer morphology and sheet resistance are investigated at different annealing temperature. The presence of Ti atoms increases the thermal stability of NiSiGe about 100 °C. We demonstrate that the Ti atoms retard the Ni germanosilicidation rate, stabilize the NiSiGe phase, and smooth the NiSiGe/SiGe interface. |
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| 700 | 1 | _ | |a Zhao, Qing-Tai |0 P:(DE-Juel1)128649 |b 9 |
| 773 | _ | _ | |a 10.1016/j.mee.2014.12.016 |g Vol. 137, p. 92 - 95 |0 PERI:(DE-600)1497065-x |p 92 - 95 |t Microelectronic engineering |v 137 |y 2015 |x 0167-9317 |
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