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000821158 005__ 20210129224815.0
000821158 020__ $$a978-1-4673-7356-2
000821158 0247_ $$2doi$$a10.1109/IITC-MAM.2015.7325616
000821158 037__ $$aFZJ-2016-06396
000821158 1001_ $$0P:(DE-HGF)0$$aZhang, Haitao$$b0
000821158 1112_ $$a2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)$$cGrenoble$$d5/18/2015 - 5/21/2015$$wFrance
000821158 245__ $$aImproved NiSi contacts on Si by CF4 plasma immersion ion implantation for 14nm node MOSFETs
000821158 260__ $$bIEEE$$c2015
000821158 300__ $$a187-189
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000821158 520__ $$aWe present in this paper high quality thin NiSi contacts on Si for the 16nm node using pre-silicidation CF4 Plasma Immersion Ion Implantation (PIII) The thermal stability, the layer uniformity and the interface roughness of thin NiSi layers are improved by CF4 PIII, which is assumed to be caused by segregation of C, F atoms at the grain boundaries and at the NiSi/Si interface. The Schottky barrier height of NiSi/p-Si is also lowered by CF4 plasma, thus a lower contact resistance on p+ doped Si is expected.
000821158 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
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000821158 7001_ $$0P:(DE-HGF)0$$aDuchaine, Julian$$b1
000821158 7001_ $$0P:(DE-HGF)0$$aTorregrosa, Frank$$b2
000821158 7001_ $$0P:(DE-HGF)0$$aLiu, Linjie$$b3
000821158 7001_ $$0P:(DE-HGF)0$$aHollander, Bernd$$b4
000821158 7001_ $$0P:(DE-Juel1)133840$$aBreuer, Uwe$$b5$$ufzj
000821158 7001_ $$0P:(DE-Juel1)128609$$aMantl, Siegfried$$b6$$ufzj
000821158 7001_ $$0P:(DE-Juel1)128649$$aZhao, Qing-Tai$$b7$$ufzj
000821158 773__ $$a10.1109/IITC-MAM.2015.7325616
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