Contribution to a conference proceedings/Contribution to a book

FZJ-2016-06396

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Improved NiSi contacts on Si by CF4 plasma immersion ion implantation for 14nm node MOSFETs

Zhang, H.FZJ* ; Duchaine, J. ; Torregrosa, F. ; Liu, L.FZJ* ; Hollander, B.FZJ* ; Breuer, U.FZJ* ; Mantl, S.FZJ* ; Zhao, Q.-T.FZJ*

2015
IEEE
ISBN: 978-1-4673-7356-2

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Please use a persistent id in citations: doi:10.1109/IITC-MAM.2015.7325616

Abstract: We present in this paper high quality thin NiSi contacts on Si for the 16nm node using pre-silicidation CF4 Plasma Immersion Ion Implantation (PIII) The thermal stability, the layer uniformity and the interface roughness of thin NiSi layers are improved by CF4 PIII, which is assumed to be caused by segregation of C, F atoms at the grain boundaries and at the NiSi/Si interface. The Schottky barrier height of NiSi/p-Si is also lowered by CF4 plasma, thus a lower contact resistance on p+ doped Si is expected.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Analytik (ZEA-3)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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