TY  - CONF
AU  - Zhang, Haitao
AU  - Duchaine, Julian
AU  - Torregrosa, Frank
AU  - Liu, Linjie
AU  - Hollander, Bernd
AU  - Breuer, Uwe
AU  - Mantl, Siegfried
AU  - Zhao, Qing-Tai
TI  - Improved NiSi contacts on Si by CF4 plasma immersion ion implantation for 14nm node MOSFETs
PB  - IEEE
M1  - FZJ-2016-06396
SN  - 978-1-4673-7356-2
SP  - 187-189
PY  - 2015
AB  - We present in this paper high quality thin NiSi contacts on Si for the 16nm node using pre-silicidation CF4 Plasma Immersion Ion Implantation (PIII) The thermal stability, the layer uniformity and the interface roughness of thin NiSi layers are improved by CF4 PIII, which is assumed to be caused by segregation of C, F atoms at the grain boundaries and at the NiSi/Si interface. The Schottky barrier height of NiSi/p-Si is also lowered by CF4 plasma, thus a lower contact resistance on p+ doped Si is expected.
T2  - 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)
CY  - 18 May 2015 - 21 May 2015, Grenoble (France)
Y2  - 18 May 2015 - 21 May 2015
M2  - Grenoble, France
LB  - PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
DO  - DOI:10.1109/IITC-MAM.2015.7325616
UR  - https://juser.fz-juelich.de/record/821158
ER  -