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@INPROCEEDINGS{Zhang:821158,
author = {Zhang, Haitao and Duchaine, Julian and Torregrosa, Frank
and Liu, Linjie and Hollander, Bernd and Breuer, Uwe and
Mantl, Siegfried and Zhao, Qing-Tai},
title = {{I}mproved {N}i{S}i contacts on {S}i by {CF}4 plasma
immersion ion implantation for 14nm node {MOSFET}s},
publisher = {IEEE},
reportid = {FZJ-2016-06396},
isbn = {978-1-4673-7356-2},
pages = {187-189},
year = {2015},
abstract = {We present in this paper high quality thin NiSi contacts on
Si for the 16nm node using pre-silicidation CF4 Plasma
Immersion Ion Implantation (PIII) The thermal stability, the
layer uniformity and the interface roughness of thin NiSi
layers are improved by CF4 PIII, which is assumed to be
caused by segregation of C, F atoms at the grain boundaries
and at the NiSi/Si interface. The Schottky barrier height of
NiSi/p-Si is also lowered by CF4 plasma, thus a lower
contact resistance on p+ doped Si is expected.},
date = {5182015},
organization = {2015 IEEE International Interconnect
Technology Conference and 2015 IEEE
Materials for Advanced Metallization
Conference (IITC/MAM), Grenoble
(France), 18 May 2015 - 21 May 2015},
cin = {PGI-9 / ZEA-3},
cid = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)ZEA-3-20090406},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
doi = {10.1109/IITC-MAM.2015.7325616},
url = {https://juser.fz-juelich.de/record/821158},
}