Home > Publications database > Improved NiSi contacts on Si by CF4 plasma immersion ion implantation for 14nm node MOSFETs > print

001     821158
005     20210129224815.0
020 _ _ |a 978-1-4673-7356-2
024 7 _ |a 10.1109/IITC-MAM.2015.7325616
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037 _ _ |a FZJ-2016-06396
100 1 _ |a Zhang, Haitao
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111 2 _ |a 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)
|c Grenoble
|d 5/18/2015 - 5/21/2015
|w France
245 _ _ |a Improved NiSi contacts on Si by CF4 plasma immersion ion implantation for 14nm node MOSFETs
260 _ _ |c 2015
|b IEEE
300 _ _ |a 187-189
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336 7 _ |a Contribution to a book
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520 _ _ |a We present in this paper high quality thin NiSi contacts on Si for the 16nm node using pre-silicidation CF4 Plasma Immersion Ion Implantation (PIII) The thermal stability, the layer uniformity and the interface roughness of thin NiSi layers are improved by CF4 PIII, which is assumed to be caused by segregation of C, F atoms at the grain boundaries and at the NiSi/Si interface. The Schottky barrier height of NiSi/p-Si is also lowered by CF4 plasma, thus a lower contact resistance on p+ doped Si is expected.
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700 1 _ |a Duchaine, Julian
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700 1 _ |a Torregrosa, Frank
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700 1 _ |a Liu, Linjie
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700 1 _ |a Hollander, Bernd
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700 1 _ |a Breuer, Uwe
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700 1 _ |a Mantl, Siegfried
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700 1 _ |a Zhao, Qing-Tai
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773 _ _ |a 10.1109/IITC-MAM.2015.7325616
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