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000821159 1001_ $$0P:(DE-HGF)0$$aBlaeser, S.$$b0
000821159 1112_ $$a2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)$$cBologna$$d1/26/2015 - 1/28/2015$$wItaly
000821159 245__ $$aExperimental demonstration of planar SiGe on Si TFETs with counter doped pocket
000821159 260__ $$bIEEE$$c2015
000821159 29510 $$aEUROSOI-ULIS 2015
000821159 300__ $$a297-300
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000821159 520__ $$aThis paper presents both experimental and TCAD simulation results on a planar tunneling field-effect transistor (TFET) using compressively strained Si0.45Ge0.55 on Si. Introducing a counter doped pocket at the source tunnel junction in combination with a selective and self-adjusted silicidation to enlarge the tunneling area enables line tunneling aligned with the gate electric field which results in an enhanced band-to-band tunneling (BTBT) probability, increased on-current Ion and reduced inverse subthreshold swing (SS).
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000821159 7001_ $$0P:(DE-HGF)0$$aRichter, S.$$b1
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000821159 7001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b4$$ufzj
000821159 7001_ $$0P:(DE-Juel1)128649$$aZhao, Q. T.$$b5$$ufzj
000821159 7001_ $$0P:(DE-Juel1)128609$$aMantl, Siegfried$$b6
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