Contribution to a conference proceedings/Contribution to a book

FZJ-2016-06397

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Experimental demonstration of planar SiGe on Si TFETs with counter doped pocket

Blaeser, S. ; Richter, S.FZJ* ; Wirths, S.FZJ* ; Trellenkamp, S.PGI-8-PT* ; Buca, D.FZJ* ; Zhao, Q. T.FZJ* ; Mantl, S.FZJ*

2015
IEEE
ISBN: 978-1-4799-6911-1

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Please use a persistent id in citations: doi:10.1109/ULIS.2015.7063832

Abstract: This paper presents both experimental and TCAD simulation results on a planar tunneling field-effect transistor (TFET) using compressively strained Si0.45Ge0.55 on Si. Introducing a counter doped pocket at the source tunnel junction in combination with a selective and self-adjusted silicidation to enlarge the tunneling area enables line tunneling aligned with the gate electric field which results in an enhanced band-to-band tunneling (BTBT) probability, increased on-current Ion and reduced inverse subthreshold swing (SS).

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. PGI-8-PT (PGI-8-PT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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