TY  - CONF
AU  - Blaeser, S.
AU  - Richter, S.
AU  - Wirths, S.
AU  - Trellenkamp, S.
AU  - Buca, D.
AU  - Zhao, Q. T.
AU  - Mantl, Siegfried
TI  - Experimental demonstration of planar SiGe on Si TFETs with counter doped pocket
PB  - IEEE
M1  - FZJ-2016-06397
SN  - 978-1-4799-6911-1
SP  - 297-300
PY  - 2015
AB  - This paper presents both experimental and TCAD simulation results on a planar tunneling field-effect transistor (TFET) using compressively strained Si0.45Ge0.55 on Si. Introducing a counter doped pocket at the source tunnel junction in combination with a selective and self-adjusted silicidation to enlarge the tunneling area enables line tunneling aligned with the gate electric field which results in an enhanced band-to-band tunneling (BTBT) probability, increased on-current Ion and reduced inverse subthreshold swing (SS).
T2  - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
CY  - 6 Dec 2015 - 8 Dec 2015, Bologna (Italy)
Y2  - 6 Dec 2015 - 8 Dec 2015
M2  - Bologna, Italy
LB  - PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
DO  - DOI:10.1109/ULIS.2015.7063832
UR  - https://juser.fz-juelich.de/record/821159
ER  -