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@INPROCEEDINGS{Blaeser:821159,
author = {Blaeser, S. and Richter, S. and Wirths, S. and Trellenkamp,
S. and Buca, D. and Zhao, Q. T. and Mantl, Siegfried},
title = {{E}xperimental demonstration of planar {S}i{G}e on {S}i
{TFET}s with counter doped pocket},
publisher = {IEEE},
reportid = {FZJ-2016-06397},
isbn = {978-1-4799-6911-1},
pages = {297-300},
year = {2015},
comment = {EUROSOI-ULIS 2015},
booktitle = {EUROSOI-ULIS 2015},
abstract = {This paper presents both experimental and TCAD simulation
results on a planar tunneling field-effect transistor (TFET)
using compressively strained Si0.45Ge0.55 on Si. Introducing
a counter doped pocket at the source tunnel junction in
combination with a selective and self-adjusted silicidation
to enlarge the tunneling area enables line tunneling aligned
with the gate electric field which results in an enhanced
band-to-band tunneling (BTBT) probability, increased
on-current Ion and reduced inverse subthreshold swing (SS).},
date = {1262015},
organization = {2015 Joint International EUROSOI
Workshop and International Conference
on Ultimate Integration on Silicon
(EUROSOI-ULIS), Bologna (Italy), 6 Dec
2015 - 8 Dec 2015},
cin = {PGI-9 / PGI-8-PT},
cid = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-8-PT-20110228},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
doi = {10.1109/ULIS.2015.7063832},
url = {https://juser.fz-juelich.de/record/821159},
}