Hauptseite > Publikationsdatenbank > Experimental demonstration of planar SiGe on Si TFETs with counter doped pocket > print

001     821159
005     20210129224815.0
020 _ _ |a 978-1-4799-6911-1
024 7 _ |a 10.1109/ULIS.2015.7063832
|2 doi
037 _ _ |a FZJ-2016-06397
100 1 _ |a Blaeser, S.
|0 P:(DE-HGF)0
|b 0
111 2 _ |a 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
|c Bologna
|d 1/26/2015 - 1/28/2015
|w Italy
245 _ _ |a Experimental demonstration of planar SiGe on Si TFETs with counter doped pocket
260 _ _ |c 2015
|b IEEE
295 1 0 |a EUROSOI-ULIS 2015
300 _ _ |a 297-300
336 7 _ |a CONFERENCE_PAPER
|2 ORCID
336 7 _ |a Conference Paper
|0 33
|2 EndNote
336 7 _ |a INPROCEEDINGS
|2 BibTeX
336 7 _ |a conferenceObject
|2 DRIVER
336 7 _ |a Output Types/Conference Paper
|2 DataCite
336 7 _ |a Contribution to a conference proceedings
|b contrib
|m contrib
|0 PUB:(DE-HGF)8
|s 1481203129_21513
|2 PUB:(DE-HGF)
336 7 _ |a Contribution to a book
|0 PUB:(DE-HGF)7
|2 PUB:(DE-HGF)
|m contb
520 _ _ |a This paper presents both experimental and TCAD simulation results on a planar tunneling field-effect transistor (TFET) using compressively strained Si0.45Ge0.55 on Si. Introducing a counter doped pocket at the source tunnel junction in combination with a selective and self-adjusted silicidation to enlarge the tunneling area enables line tunneling aligned with the gate electric field which results in an enhanced band-to-band tunneling (BTBT) probability, increased on-current Ion and reduced inverse subthreshold swing (SS).
536 _ _ |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521)
|0 G:(DE-HGF)POF3-521
|c POF3-521
|f POF III
|x 0
588 _ _ |a Dataset connected to CrossRef Conference
700 1 _ |a Richter, S.
|0 P:(DE-HGF)0
|b 1
700 1 _ |a Wirths, S.
|0 P:(DE-Juel1)138778
|b 2
|u fzj
700 1 _ |a Trellenkamp, S.
|0 P:(DE-Juel1)128856
|b 3
700 1 _ |a Buca, D.
|0 P:(DE-Juel1)125569
|b 4
|u fzj
700 1 _ |a Zhao, Q. T.
|0 P:(DE-Juel1)128649
|b 5
|u fzj
700 1 _ |a Mantl, Siegfried
|0 P:(DE-Juel1)128609
|b 6
773 _ _ |a 10.1109/ULIS.2015.7063832
909 C O |o oai:juser.fz-juelich.de:821159
|p VDB
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 6
|6 P:(DE-Juel1)128609
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 1
|6 P:(DE-Juel1)5960
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 2
|6 P:(DE-Juel1)138778
910 1 _ |a PGI-8-PT
|0 I:(DE-Juel1)PGI-8-PT-20110228
|k PGI-8-PT
|b 3
|6 P:(DE-Juel1)128856
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 4
|6 P:(DE-Juel1)125569
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 5
|6 P:(DE-Juel1)128649
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 6
|6 P:(DE-Juel1)128609
913 1 _ |a DE-HGF
|b Key Technologies
|l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
|1 G:(DE-HGF)POF3-520
|0 G:(DE-HGF)POF3-521
|2 G:(DE-HGF)POF3-500
|v Controlling Electron Charge-Based Phenomena
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF3
914 1 _ |y 2016
920 _ _ |l yes
920 1 _ |0 I:(DE-Juel1)PGI-9-20110106
|k PGI-9
|l Halbleiter-Nanoelektronik
|x 0
920 1 _ |0 I:(DE-Juel1)PGI-8-PT-20110228
|k PGI-8-PT
|l PGI-8-PT
|x 1
980 _ _ |a contrib
980 _ _ |a VDB
980 _ _ |a contb
980 _ _ |a I:(DE-Juel1)PGI-9-20110106
980 _ _ |a I:(DE-Juel1)PGI-8-PT-20110228
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-8-PT-20110228

LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21