%0 Conference Paper
%A Blaeser, S.
%A Glass, S.
%A Schulte-Braucks, C.
%A Narimani, K.
%A von den Driesch, Nils
%A Wirths, S.
%A Tiedemann, Andreas
%A Trellenkamp, S.
%A Buca, D.
%A Zhao, Q. T.
%A Mantl, S.
%T Novel SiGe/Si line tunneling TFET with high Ion at low Vdd and constant SS
%C Piscataway, NJ
%I IEEE
%M FZJ-2016-06401
%@ 978-1-4673-9894-7
%P 608-611
%D 2015
%X This paper presents a novel SiGe/Si tunneling field-effect transistor (TFET) which exploits line tunneling parallel with the gate electric field. The device makes use of selective and self-adjusted silicidation and a counter doped pocket within the SiGe layer at the source tunnel junction, resulting in a high on-current Ion = 6.7 μA/μm at a supply voltage VDD = -0.5 V and a constant subthreshold swing (SS) of about 80 mV/dec over four orders of magnitude of drain-current Id.
%B 2015 IEEE International Electron Devices Meeting (IEDM)
%C 7 Dec 2015 - 9 Dec 2015, Washington (DC)
Y2 7 Dec 2015 - 9 Dec 2015
M2 Washington, DC
%K Integrierte Schaltung (gnd)
%F PUB:(DE-HGF)8
%9 Contribution to a conference proceedings
%R 10.1109/IEDM.2015.7409757
%U https://juser.fz-juelich.de/record/821163