Contribution to a conference proceedings

FZJ-2016-06401

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Novel SiGe/Si line tunneling TFET with high Ion at low Vdd and constant SS

Blaeser, S.FZJ* ; Glass, S.FZJ* ; Schulte-Braucks, C.FZJ* ; Narimani, K.FZJ* ; von den Driesch, N.FZJ* ; Wirths, S.FZJ* ; Tiedemann, A.FZJ* ; Trellenkamp, S.PGI-8-PT* ; Buca, D.FZJ* ; Zhao, Q. T.FZJ* ; Mantl, S.FZJ*

2015
IEEE Piscataway, NJ
ISBN: 978-1-4673-9894-7, 978-1-4673-9893-0, 978-1-4673-9895-4

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Please use a persistent id in citations: doi:10.1109/IEDM.2015.7409757

Abstract: This paper presents a novel SiGe/Si tunneling field-effect transistor (TFET) which exploits line tunneling parallel with the gate electric field. The device makes use of selective and self-adjusted silicidation and a counter doped pocket within the SiGe layer at the source tunnel junction, resulting in a high on-current Ion = 6.7 μA/μm at a supply voltage VDD = -0.5 V and a constant subthreshold swing (SS) of about 80 mV/dec over four orders of magnitude of drain-current Id.

Keyword(s): Integrierte Schaltung

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. PGI-8-PT (PGI-8-PT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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