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000821163 0247_ $$2doi$$a10.1109/IEDM.2015.7409757
000821163 037__ $$aFZJ-2016-06401
000821163 041__ $$aEnglish
000821163 1001_ $$0P:(DE-HGF)0$$aBlaeser, S.$$b0
000821163 1112_ $$a2015 IEEE International Electron Devices Meeting (IEDM)$$cWashington$$d12/7/2015 - 12/9/2015$$wDC
000821163 245__ $$aNovel SiGe/Si line tunneling TFET with high Ion at low Vdd and constant SS
000821163 260__ $$aPiscataway, NJ$$bIEEE$$c2015
000821163 300__ $$a608-611
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000821163 520__ $$aThis paper presents a novel SiGe/Si tunneling field-effect transistor (TFET) which exploits line tunneling parallel with the gate electric field. The device makes use of selective and self-adjusted silicidation and a counter doped pocket within the SiGe layer at the source tunnel junction, resulting in a high on-current Ion = 6.7 μA/μm at a supply voltage VDD = -0.5 V and a constant subthreshold swing (SS) of about 80 mV/dec over four orders of magnitude of drain-current Id.
000821163 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
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000821163 7001_ $$0P:(DE-Juel1)165997$$aGlass, S.$$b1$$ufzj
000821163 7001_ $$0P:(DE-Juel1)161530$$aSchulte-Braucks, C.$$b2$$ufzj
000821163 7001_ $$0P:(DE-Juel1)164261$$aNarimani, K.$$b3$$ufzj
000821163 7001_ $$0P:(DE-Juel1)161247$$avon den Driesch, Nils$$b4$$ufzj
000821163 7001_ $$0P:(DE-Juel1)138778$$aWirths, S.$$b5$$ufzj
000821163 7001_ $$0P:(DE-Juel1)128639$$aTiedemann, Andreas$$b6$$ufzj
000821163 7001_ $$0P:(DE-Juel1)128856$$aTrellenkamp, S.$$b7
000821163 7001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b8$$ufzj
000821163 7001_ $$0P:(DE-Juel1)128649$$aZhao, Q. T.$$b9$$ufzj
000821163 7001_ $$0P:(DE-Juel1)128609$$aMantl, S.$$b10$$ufzj
000821163 773__ $$a10.1109/IEDM.2015.7409757
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