TY  - CONF
AU  - Blaeser, S.
AU  - Glass, S.
AU  - Schulte-Braucks, C.
AU  - Narimani, K.
AU  - von den Driesch, Nils
AU  - Wirths, S.
AU  - Tiedemann, Andreas
AU  - Trellenkamp, S.
AU  - Buca, D.
AU  - Zhao, Q. T.
AU  - Mantl, S.
TI  - Novel SiGe/Si line tunneling TFET with high Ion at low Vdd and constant SS
CY  - Piscataway, NJ
PB  - IEEE
M1  - FZJ-2016-06401
SN  - 978-1-4673-9894-7
SP  - 608-611
PY  - 2015
AB  - This paper presents a novel SiGe/Si tunneling field-effect transistor (TFET) which exploits line tunneling parallel with the gate electric field. The device makes use of selective and self-adjusted silicidation and a counter doped pocket within the SiGe layer at the source tunnel junction, resulting in a high on-current Ion = 6.7 μA/μm at a supply voltage VDD = -0.5 V and a constant subthreshold swing (SS) of about 80 mV/dec over four orders of magnitude of drain-current Id.
T2  - 2015 IEEE International Electron Devices Meeting (IEDM)
CY  - 7 Dec 2015 - 9 Dec 2015, Washington (DC)
Y2  - 7 Dec 2015 - 9 Dec 2015
M2  - Washington, DC
KW  - Integrierte Schaltung (gnd)
LB  - PUB:(DE-HGF)8
DO  - DOI:10.1109/IEDM.2015.7409757
UR  - https://juser.fz-juelich.de/record/821163
ER  -