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@INPROCEEDINGS{Blaeser:821163,
author = {Blaeser, S. and Glass, S. and Schulte-Braucks, C. and
Narimani, K. and von den Driesch, Nils and Wirths, S. and
Tiedemann, Andreas and Trellenkamp, S. and Buca, D. and
Zhao, Q. T. and Mantl, S.},
title = {{N}ovel {S}i{G}e/{S}i line tunneling {TFET} with high {I}on
at low {V}dd and constant {SS}},
address = {Piscataway, NJ},
publisher = {IEEE},
reportid = {FZJ-2016-06401},
isbn = {978-1-4673-9894-7},
pages = {608-611},
year = {2015},
abstract = {This paper presents a novel SiGe/Si tunneling field-effect
transistor (TFET) which exploits line tunneling parallel
with the gate electric field. The device makes use of
selective and self-adjusted silicidation and a counter doped
pocket within the SiGe layer at the source tunnel junction,
resulting in a high on-current Ion = 6.7 μA/μm at a supply
voltage VDD = -0.5 V and a constant subthreshold swing (SS)
of about 80 mV/dec over four orders of magnitude of
drain-current Id.},
month = {Jul},
date = {1272015},
organization = {2015 IEEE International Electron
Devices Meeting (IEDM), Washington
(DC), 7 Dec 2015 - 9 Dec 2015},
keywords = {Integrierte Schaltung (gnd)},
cin = {PGI-9 / PGI-8-PT},
cid = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-8-PT-20110228},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)8},
doi = {10.1109/IEDM.2015.7409757},
url = {https://juser.fz-juelich.de/record/821163},
}