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| 001 | 821163 | ||
| 005 | 20210129224816.0 | ||
| 020 | _ | _ | |a 978-1-4673-9894-7 |
| 020 | _ | _ | |a 978-1-4673-9893-0 |
| 020 | _ | _ | |a 978-1-4673-9895-4 |
| 024 | 7 | _ | |a 10.1109/IEDM.2015.7409757 |2 doi |
| 037 | _ | _ | |a FZJ-2016-06401 |
| 041 | _ | _ | |a English |
| 100 | 1 | _ | |a Blaeser, S. |0 P:(DE-HGF)0 |b 0 |
| 111 | 2 | _ | |a 2015 IEEE International Electron Devices Meeting (IEDM) |c Washington |d 12/7/2015 - 12/9/2015 |w DC |
| 245 | _ | _ | |a Novel SiGe/Si line tunneling TFET with high Ion at low Vdd and constant SS |
| 260 | _ | _ | |a Piscataway, NJ |c 2015 |b IEEE |
| 300 | _ | _ | |a 608-611 |
| 336 | 7 | _ | |a CONFERENCE_PAPER |2 ORCID |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
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| 336 | 7 | _ | |a Contribution to a conference proceedings |b contrib |m contrib |0 PUB:(DE-HGF)8 |s 1481203483_21514 |2 PUB:(DE-HGF) |
| 520 | _ | _ | |a This paper presents a novel SiGe/Si tunneling field-effect transistor (TFET) which exploits line tunneling parallel with the gate electric field. The device makes use of selective and self-adjusted silicidation and a counter doped pocket within the SiGe layer at the source tunnel junction, resulting in a high on-current Ion = 6.7 μA/μm at a supply voltage VDD = -0.5 V and a constant subthreshold swing (SS) of about 80 mV/dec over four orders of magnitude of drain-current Id. |
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| 700 | 1 | _ | |a von den Driesch, Nils |0 P:(DE-Juel1)161247 |b 4 |u fzj |
| 700 | 1 | _ | |a Wirths, S. |0 P:(DE-Juel1)138778 |b 5 |u fzj |
| 700 | 1 | _ | |a Tiedemann, Andreas |0 P:(DE-Juel1)128639 |b 6 |u fzj |
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| 773 | _ | _ | |a 10.1109/IEDM.2015.7409757 |
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