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@INPROCEEDINGS{Horst:821182,
      author       = {Horst, Fabian and Graef, Michael and Hosenfeld, Fabian and
                      Farokhnejad, Atieh and Hain, Franziska and Luong, Gia Vinh
                      and Zhao, Qing-Tai and Iniguez, Benjamin and Kloes,
                      Alexander},
      title        = {{I}mplementation of a {DC} compact model for double-gate
                      {T}unnel-{FET} based on 2{D} calculations and application in
                      circuit simulation},
      publisher    = {IEEE},
      reportid     = {FZJ-2016-06420},
      isbn         = {978-1-5090-2969-3},
      pages        = {456-459},
      year         = {2016},
      abstract     = {This paper introduces a two-dimensional physics-based
                      compact model for a double-gate (DG) Tunnel-FET (TFET)
                      implemented in Verilog-A. The compact model is derived from
                      an analytical model published in [1], [2], [3]. TCAD
                      Sentaurus simulation data as well as measurement data are
                      used to verify and show the flexibility of the modeling
                      approach. Advantages and limitations of the compact model
                      are analyzed and discussed. In order to demonstrate the
                      numerical stability of the model, a basic circuit in form of
                      a single stage inverter is simulated using complementary
                      Tunnel-FET logic. The results of this circuit simulation are
                      compared to measurements on fabricated inverters and are in
                      good agreement.},
      month         = {Dec},
      date          = {9122016},
      organization  = {ESSDERC 2016 - 46th European
                       Solid-State Device Research Conference,
                       Lausanne (Switzerland), 12 Sep 2016 -
                       15 Sep 2016},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
      doi          = {10.1109/ESSDERC.2016.7599684},
      url          = {https://juser.fz-juelich.de/record/821182},
}