Contribution to a conference proceedings/Contribution to a book

FZJ-2016-06420

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation

Horst, F. (Corresponding author) ; Graef, M. ; Hosenfeld, F. ; Farokhnejad, A. ; Hain, F. ; Luong, G. V.FZJ* ; Zhao, Q.-T.FZJ* ; Iniguez, B. ; Kloes, A.

2016
IEEE
ISBN: 978-1-5090-2969-3

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Please use a persistent id in citations: doi:10.1109/ESSDERC.2016.7599684

Abstract: This paper introduces a two-dimensional physics-based compact model for a double-gate (DG) Tunnel-FET (TFET) implemented in Verilog-A. The compact model is derived from an analytical model published in [1], [2], [3]. TCAD Sentaurus simulation data as well as measurement data are used to verify and show the flexibility of the modeling approach. Advantages and limitations of the compact model are analyzed and discussed. In order to demonstrate the numerical stability of the model, a basic circuit in form of a single stage inverter is simulated using complementary Tunnel-FET logic. The results of this circuit simulation are compared to measurements on fabricated inverters and are in good agreement.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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