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| Home > Publications database > Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation > print |
| 001 | 821182 | ||
| 005 | 20210129224820.0 | ||
| 020 | _ | _ | |a 978-1-5090-2969-3 |
| 024 | 7 | _ | |a 10.1109/ESSDERC.2016.7599684 |2 doi |
| 037 | _ | _ | |a FZJ-2016-06420 |
| 100 | 1 | _ | |a Horst, Fabian |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 111 | 2 | _ | |a ESSDERC 2016 - 46th European Solid-State Device Research Conference |c Lausanne |d 9/12/2016 - 9/15/2016 |w Switzerland |
| 245 | _ | _ | |a Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation |
| 260 | _ | _ | |c 2016 |b IEEE |
| 300 | _ | _ | |a 456-459 |
| 336 | 7 | _ | |a CONFERENCE_PAPER |2 ORCID |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
| 336 | 7 | _ | |a conferenceObject |2 DRIVER |
| 336 | 7 | _ | |a Output Types/Conference Paper |2 DataCite |
| 336 | 7 | _ | |a Contribution to a conference proceedings |b contrib |m contrib |0 PUB:(DE-HGF)8 |s 1481200248_21511 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Contribution to a book |0 PUB:(DE-HGF)7 |2 PUB:(DE-HGF) |m contb |
| 520 | _ | _ | |a This paper introduces a two-dimensional physics-based compact model for a double-gate (DG) Tunnel-FET (TFET) implemented in Verilog-A. The compact model is derived from an analytical model published in [1], [2], [3]. TCAD Sentaurus simulation data as well as measurement data are used to verify and show the flexibility of the modeling approach. Advantages and limitations of the compact model are analyzed and discussed. In order to demonstrate the numerical stability of the model, a basic circuit in form of a single stage inverter is simulated using complementary Tunnel-FET logic. The results of this circuit simulation are compared to measurements on fabricated inverters and are in good agreement. |
| 536 | _ | _ | |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521) |0 G:(DE-HGF)POF3-521 |c POF3-521 |f POF III |x 0 |
| 588 | _ | _ | |a Dataset connected to CrossRef Conference |
| 700 | 1 | _ | |a Graef, Michael |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Hosenfeld, Fabian |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Farokhnejad, Atieh |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Hain, Franziska |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Luong, Gia Vinh |0 P:(DE-Juel1)156277 |b 5 |u fzj |
| 700 | 1 | _ | |a Zhao, Qing-Tai |0 P:(DE-Juel1)128649 |b 6 |u fzj |
| 700 | 1 | _ | |a Iniguez, Benjamin |0 P:(DE-HGF)0 |b 7 |
| 700 | 1 | _ | |a Kloes, Alexander |0 P:(DE-HGF)0 |b 8 |
| 773 | _ | _ | |a 10.1109/ESSDERC.2016.7599684 |
| 909 | C | O | |o oai:juser.fz-juelich.de:821182 |p VDB |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 5 |6 P:(DE-Juel1)156277 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 6 |6 P:(DE-Juel1)128649 |
| 913 | 1 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
| 914 | 1 | _ | |y 2016 |
| 915 | _ | _ | |a No Authors Fulltext |0 StatID:(DE-HGF)0550 |2 StatID |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 980 | _ | _ | |a contrib |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a UNRESTRICTED |
| 980 | _ | _ | |a contb |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
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