%0 Conference Paper
%A Liu, Chang
%A Han, Qinghua
%A Luong, Gia Vinh
%A Narimani, Keyvan
%A Glass, Stefan
%A Tiedemann, Andreas
%A Trellenkamp, Stefan
%A Yu, Wenjie
%A Wang, Xi
%A Mantl, Siegfried
%A Zhao, Qing-Tai
%T Si n-TFETs on ultra thin body with suppressed ambipolarity
%I IEEE
%M FZJ-2016-06422
%@ 978-1-5090-2969-3
%P 408-411
%D 2016
%X This paper presents an ultra thin body Si n-TFET which exploits a multi-finger gate layout and steep junction formed by dopant implantation into silicide (IIS) process. The sub-threshold slope (SS) reaches a minimum value of about 45 mV/dec, average SS of <;60mV/dec and 71mV/dec over one and three decades of drain current, respectively. A remarkable high Ion/Ioff ratio (~109) is achieved due to the successfully suppressed ambipolar behavior by the asymmetric source and drain design.
%B ESSDERC 2016 - 46th European Solid-State Device Research Conference
%C 12 Sep 2016 - 15 Sep 2016, Lausanne (Switzerland)
Y2 12 Sep 2016 - 15 Sep 2016
M2 Lausanne, Switzerland
%F PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
%9 Contribution to a conference proceedingsContribution to a book
%R 10.1109/ESSDERC.2016.7599672
%U https://juser.fz-juelich.de/record/821184