Contribution to a conference proceedings/Contribution to a book

FZJ-2016-06422

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Si n-TFETs on ultra thin body with suppressed ambipolarity

Liu, C. (Corresponding author)FZJ* ; Han, Q.FZJ* ; Luong, G. V.FZJ* ; Narimani, K.FZJ* ; Glass, S.FZJ* ; Tiedemann, A.FZJ* ; Trellenkamp, S.PGI-8-PT* ; Yu, W. ; Wang, X. ; Mantl, S.FZJ* ; Zhao, Q.-T.FZJ*

2016
IEEE
ISBN: 978-1-5090-2969-3

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Please use a persistent id in citations: doi:10.1109/ESSDERC.2016.7599672

Abstract: This paper presents an ultra thin body Si n-TFET which exploits a multi-finger gate layout and steep junction formed by dopant implantation into silicide (IIS) process. The sub-threshold slope (SS) reaches a minimum value of about 45 mV/dec, average SS of <;60mV/dec and 71mV/dec over one and three decades of drain current, respectively. A remarkable high Ion/Ioff ratio (~109) is achieved due to the successfully suppressed ambipolar behavior by the asymmetric source and drain design.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)
3. PGI-8-PT (PGI-8-PT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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Database coverage:
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