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000821184 1001_ $$0P:(DE-Juel1)166278$$aLiu, Chang$$b0$$eCorresponding author$$ufzj
000821184 1112_ $$aESSDERC 2016 - 46th European Solid-State Device Research Conference$$cLausanne$$d9/12/2016 - 9/15/2016$$wSwitzerland
000821184 245__ $$aSi n-TFETs on ultra thin body with suppressed ambipolarity
000821184 260__ $$bIEEE$$c2016
000821184 300__ $$a408-411
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000821184 520__ $$aThis paper presents an ultra thin body Si n-TFET which exploits a multi-finger gate layout and steep junction formed by dopant implantation into silicide (IIS) process. The sub-threshold slope (SS) reaches a minimum value of about 45 mV/dec, average SS of <;60mV/dec and 71mV/dec over one and three decades of drain current, respectively. A remarkable high Ion/Ioff ratio (~109) is achieved due to the successfully suppressed ambipolar behavior by the asymmetric source and drain design.
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000821184 7001_ $$0P:(DE-Juel1)165600$$aHan, Qinghua$$b1$$ufzj
000821184 7001_ $$0P:(DE-Juel1)156277$$aLuong, Gia Vinh$$b2$$ufzj
000821184 7001_ $$0P:(DE-Juel1)164261$$aNarimani, Keyvan$$b3$$ufzj
000821184 7001_ $$0P:(DE-Juel1)165997$$aGlass, Stefan$$b4$$ufzj
000821184 7001_ $$0P:(DE-Juel1)128639$$aTiedemann, Andreas$$b5$$ufzj
000821184 7001_ $$0P:(DE-Juel1)128856$$aTrellenkamp, Stefan$$b6
000821184 7001_ $$0P:(DE-HGF)0$$aYu, Wenjie$$b7
000821184 7001_ $$0P:(DE-HGF)0$$aWang, Xi$$b8
000821184 7001_ $$0P:(DE-Juel1)128609$$aMantl, Siegfried$$b9$$ufzj
000821184 7001_ $$0P:(DE-Juel1)128649$$aZhao, Qing-Tai$$b10$$ufzj
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