TY  - CONF
AU  - Liu, Chang
AU  - Han, Qinghua
AU  - Luong, Gia Vinh
AU  - Narimani, Keyvan
AU  - Glass, Stefan
AU  - Tiedemann, Andreas
AU  - Trellenkamp, Stefan
AU  - Yu, Wenjie
AU  - Wang, Xi
AU  - Mantl, Siegfried
AU  - Zhao, Qing-Tai
TI  - Si n-TFETs on ultra thin body with suppressed ambipolarity
PB  - IEEE
M1  - FZJ-2016-06422
SN  - 978-1-5090-2969-3
SP  - 408-411
PY  - 2016
AB  - This paper presents an ultra thin body Si n-TFET which exploits a multi-finger gate layout and steep junction formed by dopant implantation into silicide (IIS) process. The sub-threshold slope (SS) reaches a minimum value of about 45 mV/dec, average SS of <;60mV/dec and 71mV/dec over one and three decades of drain current, respectively. A remarkable high Ion/Ioff ratio (~109) is achieved due to the successfully suppressed ambipolar behavior by the asymmetric source and drain design.
T2  - ESSDERC 2016 - 46th European Solid-State Device Research Conference
CY  - 12 Sep 2016 - 15 Sep 2016, Lausanne (Switzerland)
Y2  - 12 Sep 2016 - 15 Sep 2016
M2  - Lausanne, Switzerland
LB  - PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
DO  - DOI:10.1109/ESSDERC.2016.7599672
UR  - https://juser.fz-juelich.de/record/821184
ER  -