001     821184
005     20210129224821.0
020 _ _ |a 978-1-5090-2969-3
024 7 _ |a 10.1109/ESSDERC.2016.7599672
|2 doi
037 _ _ |a FZJ-2016-06422
100 1 _ |a Liu, Chang
|0 P:(DE-Juel1)166278
|b 0
|e Corresponding author
|u fzj
111 2 _ |a ESSDERC 2016 - 46th European Solid-State Device Research Conference
|c Lausanne
|d 9/12/2016 - 9/15/2016
|w Switzerland
245 _ _ |a Si n-TFETs on ultra thin body with suppressed ambipolarity
260 _ _ |c 2016
|b IEEE
300 _ _ |a 408-411
336 7 _ |a CONFERENCE_PAPER
|2 ORCID
336 7 _ |a Conference Paper
|0 33
|2 EndNote
336 7 _ |a INPROCEEDINGS
|2 BibTeX
336 7 _ |a conferenceObject
|2 DRIVER
336 7 _ |a Output Types/Conference Paper
|2 DataCite
336 7 _ |a Contribution to a conference proceedings
|b contrib
|m contrib
|0 PUB:(DE-HGF)8
|s 1481204593_21511
|2 PUB:(DE-HGF)
336 7 _ |a Contribution to a book
|0 PUB:(DE-HGF)7
|2 PUB:(DE-HGF)
|m contb
520 _ _ |a This paper presents an ultra thin body Si n-TFET which exploits a multi-finger gate layout and steep junction formed by dopant implantation into silicide (IIS) process. The sub-threshold slope (SS) reaches a minimum value of about 45 mV/dec, average SS of <;60mV/dec and 71mV/dec over one and three decades of drain current, respectively. A remarkable high Ion/Ioff ratio (~109) is achieved due to the successfully suppressed ambipolar behavior by the asymmetric source and drain design.
536 _ _ |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521)
|0 G:(DE-HGF)POF3-521
|c POF3-521
|f POF III
|x 0
588 _ _ |a Dataset connected to CrossRef Conference
700 1 _ |a Han, Qinghua
|0 P:(DE-Juel1)165600
|b 1
|u fzj
700 1 _ |a Luong, Gia Vinh
|0 P:(DE-Juel1)156277
|b 2
|u fzj
700 1 _ |a Narimani, Keyvan
|0 P:(DE-Juel1)164261
|b 3
|u fzj
700 1 _ |a Glass, Stefan
|0 P:(DE-Juel1)165997
|b 4
|u fzj
700 1 _ |a Tiedemann, Andreas
|0 P:(DE-Juel1)128639
|b 5
|u fzj
700 1 _ |a Trellenkamp, Stefan
|0 P:(DE-Juel1)128856
|b 6
700 1 _ |a Yu, Wenjie
|0 P:(DE-HGF)0
|b 7
700 1 _ |a Wang, Xi
|0 P:(DE-HGF)0
|b 8
700 1 _ |a Mantl, Siegfried
|0 P:(DE-Juel1)128609
|b 9
|u fzj
700 1 _ |a Zhao, Qing-Tai
|0 P:(DE-Juel1)128649
|b 10
|u fzj
773 _ _ |a 10.1109/ESSDERC.2016.7599672
909 C O |o oai:juser.fz-juelich.de:821184
|p VDB
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 0
|6 P:(DE-Juel1)166278
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 1
|6 P:(DE-Juel1)165600
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 2
|6 P:(DE-Juel1)156277
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 3
|6 P:(DE-Juel1)164261
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 4
|6 P:(DE-Juel1)165997
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 5
|6 P:(DE-Juel1)128639
910 1 _ |a PGI-8-PT
|0 I:(DE-Juel1)PGI-8-PT-20110228
|k PGI-8-PT
|b 6
|6 P:(DE-Juel1)128856
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 9
|6 P:(DE-Juel1)128609
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 10
|6 P:(DE-Juel1)128649
913 1 _ |a DE-HGF
|b Key Technologies
|l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
|1 G:(DE-HGF)POF3-520
|0 G:(DE-HGF)POF3-521
|2 G:(DE-HGF)POF3-500
|v Controlling Electron Charge-Based Phenomena
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF3
914 1 _ |y 2016
915 _ _ |a No Authors Fulltext
|0 StatID:(DE-HGF)0550
|2 StatID
920 1 _ |0 I:(DE-Juel1)PGI-9-20110106
|k PGI-9
|l Halbleiter-Nanoelektronik
|x 0
920 1 _ |0 I:(DE-82)080009_20140620
|k JARA-FIT
|l JARA-FIT
|x 1
920 1 _ |0 I:(DE-Juel1)PGI-8-PT-20110228
|k PGI-8-PT
|l PGI-8-PT
|x 2
980 _ _ |a contrib
980 _ _ |a VDB
980 _ _ |a UNRESTRICTED
980 _ _ |a contb
980 _ _ |a I:(DE-Juel1)PGI-9-20110106
980 _ _ |a I:(DE-82)080009_20140620
980 _ _ |a I:(DE-Juel1)PGI-8-PT-20110228
981 _ _ |a I:(DE-Juel1)PGI-8-PT-20110228


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