%0 Conference Paper
%A Schulte-Braucks, Christian
%A Glass, S.
%A Hofmann, E.
%A Stange, D.
%A von den Driesch, N.
%A Zhao, Q. T.
%A Buca, D.
%A Mantl, S.
%A Hartmann, J. M.
%A Ikonic, Z.
%T Process modules for GeSn nanoelectronics with high Sn-contents
%C [Piscataway, NJ]
%I IEEE
%M FZJ-2016-06424
%@ 978-1-4673-8609-8
%P 24-27
%D 2016
%X In this paper we present a systematic study of GeSn n-FETs. First, process modules such as high-k metal gate stacks and NiGeSn - metallic contacts for use as source/drain contacts are characterized and discussed. GeSn alloys of different Sn content allow the study of the capacitance-voltage (CV) and contact characteristics of both direct and indirect bandgap semiconductors. We then present GeSn n-FET devices we have fabricated. The device characterization includes temperature dependent IV characteristics. As important step towards GeSn for tunnel-FET Ge0.87Sn0.13 tunnel-diodes with negative differential resistance at reduced temperature are shown. The present work provides a base for further optimization of GeSn FET and novel tunnel FET devices.
%B 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
%C 5 Dec 2016 - 7 Dec 2016, Vienna (Austria)
Y2 5 Dec 2016 - 7 Dec 2016
M2 Vienna, Austria
%F PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
%9 Contribution to a conference proceedingsContribution to a book
%R 10.1109/ULIS.2016.7440043
%U https://juser.fz-juelich.de/record/821186