Contribution to a conference proceedings/Contribution to a book

FZJ-2016-06424

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Process modules for GeSn nanoelectronics with high Sn-contents

Schulte-Braucks, C. (Corresponding author)FZJ* ; Glass, S.FZJ* ; Hofmann, E.FZJ* ; Stange, D.FZJ* ; von den Driesch, N.FZJ* ; Zhao, Q. T.FZJ* ; Buca, D.FZJ* ; Mantl, S.FZJ* ; Hartmann, J. M. ; Ikonic, Z.

2016
IEEE [Piscataway, NJ]
ISBN: 978-1-4673-8609-8

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Please use a persistent id in citations: doi:10.1109/ULIS.2016.7440043

Abstract: In this paper we present a systematic study of GeSn n-FETs. First, process modules such as high-k metal gate stacks and NiGeSn - metallic contacts for use as source/drain contacts are characterized and discussed. GeSn alloys of different Sn content allow the study of the capacitance-voltage (CV) and contact characteristics of both direct and indirect bandgap semiconductors. We then present GeSn n-FET devices we have fabricated. The device characterization includes temperature dependent IV characteristics. As important step towards GeSn for tunnel-FET Ge0.87Sn0.13 tunnel-diodes with negative differential resistance at reduced temperature are shown. The present work provides a base for further optimization of GeSn FET and novel tunnel FET devices.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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