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000821186 0247_ $$2doi$$a10.1109/ULIS.2016.7440043
000821186 037__ $$aFZJ-2016-06424
000821186 041__ $$aEnglish
000821186 1001_ $$0P:(DE-Juel1)161530$$aSchulte-Braucks, Christian$$b0$$eCorresponding author$$ufzj
000821186 1112_ $$a2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)$$cVienna$$d1/25/2016 - 1/27/2016$$wAustria
000821186 245__ $$aProcess modules for GeSn nanoelectronics with high Sn-contents
000821186 260__ $$a[Piscataway, NJ]$$bIEEE$$c2016
000821186 300__ $$a24-27
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000821186 520__ $$aIn this paper we present a systematic study of GeSn n-FETs. First, process modules such as high-k metal gate stacks and NiGeSn - metallic contacts for use as source/drain contacts are characterized and discussed. GeSn alloys of different Sn content allow the study of the capacitance-voltage (CV) and contact characteristics of both direct and indirect bandgap semiconductors. We then present GeSn n-FET devices we have fabricated. The device characterization includes temperature dependent IV characteristics. As important step towards GeSn for tunnel-FET Ge0.87Sn0.13 tunnel-diodes with negative differential resistance at reduced temperature are shown. The present work provides a base for further optimization of GeSn FET and novel tunnel FET devices.
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000821186 7001_ $$0P:(DE-Juel1)165997$$aGlass, S.$$b1$$ufzj
000821186 7001_ $$0P:(DE-Juel1)167568$$aHofmann, E.$$b2$$ufzj
000821186 7001_ $$0P:(DE-Juel1)161180$$aStange, D.$$b3$$ufzj
000821186 7001_ $$0P:(DE-Juel1)161247$$avon den Driesch, N.$$b4$$ufzj
000821186 7001_ $$0P:(DE-Juel1)128649$$aZhao, Q. T.$$b5$$ufzj
000821186 7001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b6$$ufzj
000821186 7001_ $$0P:(DE-Juel1)128609$$aMantl, S.$$b7$$ufzj
000821186 7001_ $$0P:(DE-HGF)0$$aHartmann, J. M.$$b8
000821186 7001_ $$0P:(DE-HGF)0$$aIkonic, Z.$$b9
000821186 773__ $$a10.1109/ULIS.2016.7440043
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