TY  - CONF
AU  - Schulte-Braucks, Christian
AU  - Glass, S.
AU  - Hofmann, E.
AU  - Stange, D.
AU  - von den Driesch, N.
AU  - Zhao, Q. T.
AU  - Buca, D.
AU  - Mantl, S.
AU  - Hartmann, J. M.
AU  - Ikonic, Z.
TI  - Process modules for GeSn nanoelectronics with high Sn-contents
CY  - [Piscataway, NJ]
PB  - IEEE
M1  - FZJ-2016-06424
SN  - 978-1-4673-8609-8
SP  - 24-27
PY  - 2016
AB  - In this paper we present a systematic study of GeSn n-FETs. First, process modules such as high-k metal gate stacks and NiGeSn - metallic contacts for use as source/drain contacts are characterized and discussed. GeSn alloys of different Sn content allow the study of the capacitance-voltage (CV) and contact characteristics of both direct and indirect bandgap semiconductors. We then present GeSn n-FET devices we have fabricated. The device characterization includes temperature dependent IV characteristics. As important step towards GeSn for tunnel-FET Ge0.87Sn0.13 tunnel-diodes with negative differential resistance at reduced temperature are shown. The present work provides a base for further optimization of GeSn FET and novel tunnel FET devices.
T2  - 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
CY  - 5 Dec 2016 - 7 Dec 2016, Vienna (Austria)
Y2  - 5 Dec 2016 - 7 Dec 2016
M2  - Vienna, Austria
LB  - PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
DO  - DOI:10.1109/ULIS.2016.7440043
UR  - https://juser.fz-juelich.de/record/821186
ER  -