Home > Publications database > Process modules for GeSn nanoelectronics with high Sn-contents > print

001     821186
005     20210129224821.0
020 _ _ |a 978-1-4673-8609-8
024 7 _ |a 10.1109/ULIS.2016.7440043
|2 doi
037 _ _ |a FZJ-2016-06424
041 _ _ |a English
100 1 _ |a Schulte-Braucks, Christian
|0 P:(DE-Juel1)161530
|b 0
|e Corresponding author
|u fzj
111 2 _ |a 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
|c Vienna
|d 1/25/2016 - 1/27/2016
|w Austria
245 _ _ |a Process modules for GeSn nanoelectronics with high Sn-contents
260 _ _ |a [Piscataway, NJ]
|c 2016
|b IEEE
300 _ _ |a 24-27
336 7 _ |a CONFERENCE_PAPER
|2 ORCID
336 7 _ |a Conference Paper
|0 33
|2 EndNote
336 7 _ |a INPROCEEDINGS
|2 BibTeX
336 7 _ |a conferenceObject
|2 DRIVER
336 7 _ |a Output Types/Conference Paper
|2 DataCite
336 7 _ |a Contribution to a conference proceedings
|b contrib
|m contrib
|0 PUB:(DE-HGF)8
|s 1481204721_21515
|2 PUB:(DE-HGF)
336 7 _ |a Contribution to a book
|0 PUB:(DE-HGF)7
|2 PUB:(DE-HGF)
|m contb
520 _ _ |a In this paper we present a systematic study of GeSn n-FETs. First, process modules such as high-k metal gate stacks and NiGeSn - metallic contacts for use as source/drain contacts are characterized and discussed. GeSn alloys of different Sn content allow the study of the capacitance-voltage (CV) and contact characteristics of both direct and indirect bandgap semiconductors. We then present GeSn n-FET devices we have fabricated. The device characterization includes temperature dependent IV characteristics. As important step towards GeSn for tunnel-FET Ge0.87Sn0.13 tunnel-diodes with negative differential resistance at reduced temperature are shown. The present work provides a base for further optimization of GeSn FET and novel tunnel FET devices.
536 _ _ |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521)
|0 G:(DE-HGF)POF3-521
|c POF3-521
|f POF III
|x 0
588 _ _ |a Dataset connected to CrossRef Conference
700 1 _ |a Glass, S.
|0 P:(DE-Juel1)165997
|b 1
|u fzj
700 1 _ |a Hofmann, E.
|0 P:(DE-Juel1)167568
|b 2
|u fzj
700 1 _ |a Stange, D.
|0 P:(DE-Juel1)161180
|b 3
|u fzj
700 1 _ |a von den Driesch, N.
|0 P:(DE-Juel1)161247
|b 4
|u fzj
700 1 _ |a Zhao, Q. T.
|0 P:(DE-Juel1)128649
|b 5
|u fzj
700 1 _ |a Buca, D.
|0 P:(DE-Juel1)125569
|b 6
|u fzj
700 1 _ |a Mantl, S.
|0 P:(DE-Juel1)128609
|b 7
|u fzj
700 1 _ |a Hartmann, J. M.
|0 P:(DE-HGF)0
|b 8
700 1 _ |a Ikonic, Z.
|0 P:(DE-HGF)0
|b 9
773 _ _ |a 10.1109/ULIS.2016.7440043
909 C O |o oai:juser.fz-juelich.de:821186
|p VDB
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 0
|6 P:(DE-Juel1)161530
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 1
|6 P:(DE-Juel1)165997
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 2
|6 P:(DE-Juel1)167568
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 3
|6 P:(DE-Juel1)161180
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 4
|6 P:(DE-Juel1)161247
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 5
|6 P:(DE-Juel1)128649
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 6
|6 P:(DE-Juel1)125569
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 7
|6 P:(DE-Juel1)128609
913 1 _ |a DE-HGF
|b Key Technologies
|l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
|1 G:(DE-HGF)POF3-520
|0 G:(DE-HGF)POF3-521
|2 G:(DE-HGF)POF3-500
|v Controlling Electron Charge-Based Phenomena
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF3
914 1 _ |y 2016
915 _ _ |a No Authors Fulltext
|0 StatID:(DE-HGF)0550
|2 StatID
920 _ _ |l yes
920 1 _ |0 I:(DE-Juel1)PGI-9-20110106
|k PGI-9
|l Halbleiter-Nanoelektronik
|x 0
980 _ _ |a contrib
980 _ _ |a VDB
980 _ _ |a UNRESTRICTED
980 _ _ |a contb
980 _ _ |a I:(DE-Juel1)PGI-9-20110106

LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21