%0 Conference Paper
%A Narimani, Keyvan
%A Luong, G. V.
%A Schulte-Braucks, C.
%A Trellenkamp, S.
%A Zhao, Q. T.
%A Mantl, S.
%A Chowdhury, M. F.
%T Current mirrors with strained Si single nanowire gate all around Schottky barrier MOSFETs
%C [Piscataway, NJ]
%I IEEE
%M FZJ-2016-06425
%@ 978-1-4673-8609-8
%P 178-181
%D 2016
%X In this work, we present a simple current mirror based on two single nanowire strained silicon Schottky barrier (SB) MOSFETs with gate-all-around (GAA) structure. B+ implantation into NiSi2 with dopant segregation at source and drain was used to decrease the Schottky barrier height for holes at the metal/channel junctions. The current mirror shows a very good Mirror Ratio MR = 0.99 and high output resistance of 100MΩ.
%B 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
%C 5 Dec 2016 - 7 Dec 2016, Vienna (Austria)
Y2 5 Dec 2016 - 7 Dec 2016
M2 Vienna, Austria
%F PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
%9 Contribution to a conference proceedingsContribution to a book
%R 10.1109/ULIS.2016.7440082
%U https://juser.fz-juelich.de/record/821187