Contribution to a conference proceedings/Contribution to a book

FZJ-2016-06425

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Current mirrors with strained Si single nanowire gate all around Schottky barrier MOSFETs

Narimani, K. (Corresponding author)FZJ* ; Luong, G. V.FZJ* ; Schulte-Braucks, C.FZJ* ; Trellenkamp, S.PGI-8-PT* ; Zhao, Q. T.FZJ* ; Mantl, S.FZJ* ; Chowdhury, M. F.

2016
IEEE [Piscataway, NJ]
ISBN: 978-1-4673-8609-8

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Please use a persistent id in citations: doi:10.1109/ULIS.2016.7440082

Abstract: In this work, we present a simple current mirror based on two single nanowire strained silicon Schottky barrier (SB) MOSFETs with gate-all-around (GAA) structure. B+ implantation into NiSi2 with dopant segregation at source and drain was used to decrease the Schottky barrier height for holes at the metal/channel junctions. The current mirror shows a very good Mirror Ratio MR = 0.99 and high output resistance of 100MΩ.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)
3. PGI-8-PT (PGI-8-PT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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Database coverage:
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