000821187 001__ 821187
000821187 005__ 20210129224821.0
000821187 020__ $$a978-1-4673-8609-8
000821187 0247_ $$2doi$$a10.1109/ULIS.2016.7440082
000821187 037__ $$aFZJ-2016-06425
000821187 041__ $$aEnglish
000821187 1001_ $$0P:(DE-Juel1)164261$$aNarimani, Keyvan$$b0$$eCorresponding author$$ufzj
000821187 1112_ $$a2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)$$cVienna$$d1/25/2016 - 1/27/2016$$wAustria
000821187 245__ $$aCurrent mirrors with strained Si single nanowire gate all around Schottky barrier MOSFETs
000821187 260__ $$a[Piscataway, NJ]$$bIEEE$$c2016
000821187 300__ $$a178-181
000821187 3367_ $$2ORCID$$aCONFERENCE_PAPER
000821187 3367_ $$033$$2EndNote$$aConference Paper
000821187 3367_ $$2BibTeX$$aINPROCEEDINGS
000821187 3367_ $$2DRIVER$$aconferenceObject
000821187 3367_ $$2DataCite$$aOutput Types/Conference Paper
000821187 3367_ $$0PUB:(DE-HGF)8$$2PUB:(DE-HGF)$$aContribution to a conference proceedings$$bcontrib$$mcontrib$$s1481204801_21507
000821187 3367_ $$0PUB:(DE-HGF)7$$2PUB:(DE-HGF)$$aContribution to a book$$mcontb
000821187 520__ $$aIn this work, we present a simple current mirror based on two single nanowire strained silicon Schottky barrier (SB) MOSFETs with gate-all-around (GAA) structure. B+ implantation into NiSi2 with dopant segregation at source and drain was used to decrease the Schottky barrier height for holes at the metal/channel junctions. The current mirror shows a very good Mirror Ratio MR = 0.99 and high output resistance of 100MΩ.
000821187 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000821187 588__ $$aDataset connected to CrossRef Conference
000821187 7001_ $$0P:(DE-Juel1)156277$$aLuong, G. V.$$b1$$ufzj
000821187 7001_ $$0P:(DE-Juel1)161530$$aSchulte-Braucks, C.$$b2$$ufzj
000821187 7001_ $$0P:(DE-Juel1)128856$$aTrellenkamp, S.$$b3
000821187 7001_ $$0P:(DE-Juel1)128649$$aZhao, Q. T.$$b4$$ufzj
000821187 7001_ $$0P:(DE-Juel1)128609$$aMantl, S.$$b5$$ufzj
000821187 7001_ $$0P:(DE-HGF)0$$aChowdhury, M. F.$$b6
000821187 773__ $$a10.1109/ULIS.2016.7440082
000821187 909CO $$ooai:juser.fz-juelich.de:821187$$pVDB
000821187 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)164261$$aForschungszentrum Jülich$$b0$$kFZJ
000821187 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)156277$$aForschungszentrum Jülich$$b1$$kFZJ
000821187 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)161530$$aForschungszentrum Jülich$$b2$$kFZJ
000821187 9101_ $$0I:(DE-Juel1)PGI-8-PT-20110228$$6P:(DE-Juel1)128856$$aPGI-8-PT$$b3$$kPGI-8-PT
000821187 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128649$$aForschungszentrum Jülich$$b4$$kFZJ
000821187 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128609$$aForschungszentrum Jülich$$b5$$kFZJ
000821187 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000821187 9141_ $$y2016
000821187 915__ $$0StatID:(DE-HGF)0550$$2StatID$$aNo Authors Fulltext
000821187 920__ $$lyes
000821187 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000821187 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1
000821187 9201_ $$0I:(DE-Juel1)PGI-8-PT-20110228$$kPGI-8-PT$$lPGI-8-PT$$x2
000821187 980__ $$acontrib
000821187 980__ $$aVDB
000821187 980__ $$aUNRESTRICTED
000821187 980__ $$acontb
000821187 980__ $$aI:(DE-Juel1)PGI-9-20110106
000821187 980__ $$aI:(DE-82)080009_20140620
000821187 980__ $$aI:(DE-Juel1)PGI-8-PT-20110228
000821187 981__ $$aI:(DE-Juel1)PGI-8-PT-20110228