TY  - CONF
AU  - Narimani, Keyvan
AU  - Luong, G. V.
AU  - Schulte-Braucks, C.
AU  - Trellenkamp, S.
AU  - Zhao, Q. T.
AU  - Mantl, S.
AU  - Chowdhury, M. F.
TI  - Current mirrors with strained Si single nanowire gate all around Schottky barrier MOSFETs
CY  - [Piscataway, NJ]
PB  - IEEE
M1  - FZJ-2016-06425
SN  - 978-1-4673-8609-8
SP  - 178-181
PY  - 2016
AB  - In this work, we present a simple current mirror based on two single nanowire strained silicon Schottky barrier (SB) MOSFETs with gate-all-around (GAA) structure. B+ implantation into NiSi2 with dopant segregation at source and drain was used to decrease the Schottky barrier height for holes at the metal/channel junctions. The current mirror shows a very good Mirror Ratio MR = 0.99 and high output resistance of 100MΩ.
T2  - 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
CY  - 5 Dec 2016 - 7 Dec 2016, Vienna (Austria)
Y2  - 5 Dec 2016 - 7 Dec 2016
M2  - Vienna, Austria
LB  - PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
DO  - DOI:10.1109/ULIS.2016.7440082
UR  - https://juser.fz-juelich.de/record/821187
ER  -