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@INPROCEEDINGS{Narimani:821187,
      author       = {Narimani, Keyvan and Luong, G. V. and Schulte-Braucks, C.
                      and Trellenkamp, S. and Zhao, Q. T. and Mantl, S. and
                      Chowdhury, M. F.},
      title        = {{C}urrent mirrors with strained {S}i single nanowire gate
                      all around {S}chottky barrier {MOSFET}s},
      address      = {[Piscataway, NJ]},
      publisher    = {IEEE},
      reportid     = {FZJ-2016-06425},
      isbn         = {978-1-4673-8609-8},
      pages        = {178-181},
      year         = {2016},
      abstract     = {In this work, we present a simple current mirror based on
                      two single nanowire strained silicon Schottky barrier (SB)
                      MOSFETs with gate-all-around (GAA) structure. B+
                      implantation into NiSi2 with dopant segregation at source
                      and drain was used to decrease the Schottky barrier height
                      for holes at the metal/channel junctions. The current mirror
                      shows a very good Mirror Ratio MR = 0.99 and high output
                      resistance of 100MΩ.},
      date          = {1252016},
      organization  = {2016 Joint International EUROSOI
                       Workshop and International Conference
                       on Ultimate Integration on Silicon
                       (EUROSOI-ULIS), Vienna (Austria), 5 Dec
                       2016 - 7 Dec 2016},
      cin          = {PGI-9 / JARA-FIT / PGI-8-PT},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-8-PT-20110228},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
      doi          = {10.1109/ULIS.2016.7440082},
      url          = {https://juser.fz-juelich.de/record/821187},
}