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@INPROCEEDINGS{Narimani:821187,
author = {Narimani, Keyvan and Luong, G. V. and Schulte-Braucks, C.
and Trellenkamp, S. and Zhao, Q. T. and Mantl, S. and
Chowdhury, M. F.},
title = {{C}urrent mirrors with strained {S}i single nanowire gate
all around {S}chottky barrier {MOSFET}s},
address = {[Piscataway, NJ]},
publisher = {IEEE},
reportid = {FZJ-2016-06425},
isbn = {978-1-4673-8609-8},
pages = {178-181},
year = {2016},
abstract = {In this work, we present a simple current mirror based on
two single nanowire strained silicon Schottky barrier (SB)
MOSFETs with gate-all-around (GAA) structure. B+
implantation into NiSi2 with dopant segregation at source
and drain was used to decrease the Schottky barrier height
for holes at the metal/channel junctions. The current mirror
shows a very good Mirror Ratio MR = 0.99 and high output
resistance of 100MΩ.},
date = {1252016},
organization = {2016 Joint International EUROSOI
Workshop and International Conference
on Ultimate Integration on Silicon
(EUROSOI-ULIS), Vienna (Austria), 5 Dec
2016 - 7 Dec 2016},
cin = {PGI-9 / JARA-FIT / PGI-8-PT},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$ /
I:(DE-Juel1)PGI-8-PT-20110228},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
doi = {10.1109/ULIS.2016.7440082},
url = {https://juser.fz-juelich.de/record/821187},
}